TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now?
CorePLUS?
FRFET ?
Global Power Resource SM
Programmable Active Droop?
QFET ?
Fairchild ?
CorePOWER?
CROSSVOLT ?
CTL?
Current Transfer Logic?
EcoSPARK ?
EfficentMax?
EZSWITCH? *
?
?
tm
Fairchild Semiconductor ?
FACT Quiet Series?
FACT ?
FAST ?
FastvCore?
FlashWriter ? *
FPS?
F-PFS?
Green FPS?
Green FPS? e-Series?
GTO?
IntelliMAX?
ISOPLANAR?
MegaBuck?
MICROCOUPLER?
MicroFET?
MicroPak?
MillerDrive?
MotionMax?
Motion-SPM?
OPTOLOGIC ?
OPTOPLANAR ?
?
tm
PDP SPM?
Power-SPM?
PowerTrench ?
PowerXS?
QS?
Quiet Series?
RapidConfigure?
?
Saving our world, 1mW /W /kW at a time?
SmartMax?
SMART START?
SPM ?
STEALTH?
SuperFET?
SuperSOT?-3
SuperSOT?-6
SuperSOT?-8
SupreMOS?
SyncFET?
?
The Power Franchise ?
tm
TinyBoost?
TinyBuck?
TinyLogic ?
TINYOPTO?
TinyPower?
TinyPWM?
TinyWire?
TriFault Detect?
μ SerDes?
UHC ?
Ultra FRFET?
UniFET?
VCX?
VisualMax?
XS?
* EZSWITCH? and FlashWriter ? are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used herein:
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I38
NDT451AN Rev. D1
相关PDF资料
NDT452AP MOSFET P-CH 30V 5A SOT-223-4
NDT454P MOSFET P-CH 30V 5.9A SOT-223
NDT456P MOSFET P-CH 30V 7.5A SOT-223-4
NE34018-EVGA19 EVAL BOARD NE34018 1.9GHZ
NE5520279A-EVPW09 EVAL BOARD NE5520279A 900MHZ
NE6510179A-EVPW35 EVAL BOARD NE6510179A 3.5GHZ
NE651R479A-EVPW35 EVAL BOARD NE651R479A 3.5GHZ
NHD-COG14-36 ADAPTER SMT TO 2.54MM THRU-HOLE
相关代理商/技术参数
NDT451AN_Q 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT451AN-CUT TAPE 制造商:FAIRCHILD 功能描述:NDT Series N-Ch 30V 0.035 O Enhancement Mode Field Effect Transistor- SOT-223
NDT451N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT451N_J23Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT452 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor
NDT452AP 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT452AP(J23Z) 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
NDT452AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223